rf power amplifier - Jan Jenca co.

S - Band power amplifier 200W LDMOS+ GAN

2,4...2,5GHz - power amplifier

LD MOSFET lnear power amplifier for S Band

Amplifiers are highly linear LD MOSFET (operation in class AB) suitable for all kinds of digital and analog modulation. They have control the transmitted output power, over and reverse polarity voltage protection, measure indoor temperature (° C for all models ), single DC supply 28V DC. Other frequencies and wattages upon request.

Characteristic data	LDMOS power amplifier
Frequency	2400...2500 MHz
Gain (small signal)	18 dB
Output power P1dB (CW)	200W
DC voltage / current	28V / 0,45...9A .
Impedance in / out	50 Ω
Connector in	SMA
Connector out	N
Monitoring output power	yes diode detector
Monitoring of temperature	yes
Type	200P2425/18L
Dimension of case (mm)	106 x 60 x 23
Weight	212g
Material of case	milled aluminium
Price	899,00 €

LDMOS power amplifier 200W; gain 18 dB

AFCH

GAN 150W / 18dB - S band power amplifier 2,4 - 2,5GHz

Characteristic data
GAN power amplifier for S-band

Frequency
2400-2500 MHz

Gain (small signal)

18-14 dB

Output power P1dB (CW)
150W

DC voltage / current
48V / 5A max.+ 12V / 10mA

Impedance in / out
50 Ω

Connector in
SMA

Connector out
N or SMA

Monitoring output power
yes diode detector

Monitoring of temperature
yes

Type
150P2425/17G

Dimension of case (mm)
78 x 60 x 23

Weight
190g

Material of case
milled aluminium

Price
1099,00 €

GAN power amplifier 2,4GHz_150W

GAN power amplifier 150W; gain 18 dB